Failure Estimates for SiC Power MOSFETs in Space Electronics
Finna rating
Failure Estimates for SiC Power MOSFETs in Space Electronics
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space.
Saved in:
Language |
English |
---|---|
Series | Aerospace, 3 |
Subjects | |
ISSN |
2226-4310 |